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This is manufactured by ON Semiconductor. The manufacturer part number is FDFME2P823ZT. The FET features of the product include schottky diode (isolated). It features p-channel 20v 2.6a (ta) 1.4w (ta) surface mount 6-microfet (1.6x1.6). The typical Vgs (th) (max) of the product is 1v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 6-ufdfn exposed pad. Base Part Number: fdfme2. The maximum gate charge and given voltages include 7.7nc @ 4.5v. It has a maximum Rds On and voltage of 142mohm @ 2.3a, 4.5v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.8v, 4.5v. The on semiconductor's product offers user-desired applications. The product has a 20v drain to source voltage. The maximum Vgs rate is ±8v. The product's input capacitance at maximum includes 405pf @ 10v. The product is available in surface mount configuration. The product powertrench®, is a highly preferred choice for users. 6-microfet (1.6x1.6) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 2.6a (ta). The product carries maximum power dissipation 1.4w (ta). This product use mosfet (metal oxide) technology.
For more information please check the datasheets.
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