Maximum Continuous Drain Current:
100 A
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
3V
Package Type:
TO-252
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
100 nC @ 10 V
Channel Type:
P
Length:
6.73mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
227 W
Maximum Gate Source Voltage:
±16 V
Height:
2.39mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.3V
Maximum Drain Source Resistance:
4.4 mΩ
Manufacturer Standard Lead Time:
16 Weeks
Detailed Description:
P-Channel 40V 100A (Tc) 227W (Ta) Surface Mount D-PAK (TO-252)
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number:
FDD950
Gate Charge (Qg) (Max) @ Vgs:
130nC @ 10V
Rds On (Max) @ Id, Vgs:
4.4mOhm @ 80A, 10V
FET Type:
P-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
40V
Vgs (Max):
±16V
Input Capacitance (Ciss) (Max) @ Vds:
6250pF @ 20V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
D-PAK (TO-252)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Customer Reference:
Power Dissipation (Max):
227W (Ta)
Technology:
MOSFET (Metal Oxide)
