Category:
Power MOSFET
Dimensions:
6.73 x 6.22 x 2.39mm
Maximum Continuous Drain Current:
15.3 A
Transistor Material:
Si
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Drain Source Resistance:
96 mΩ
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
22.2 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1100 pF @ 25 V
Length:
6.73mm
Pin Count:
5
Typical Turn-Off Delay Time:
27 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
42 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
2.39mm
Typical Turn-On Delay Time:
17 ns
Minimum Operating Temperature:
-55 °C
Detailed Description:
N-Channel 100V 15.3A (Tc) 42W (Tc) Surface Mount TO-252-4L
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-5, DPak (4 Leads + Tab), TO-252AD
Base Part Number:
FDD850
Gate Charge (Qg) (Max) @ Vgs:
28.9nC @ 10V
Rds On (Max) @ Id, Vgs:
75mOhm @ 12A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
100V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1465pF @ 25V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
TO-252-4L
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
15.3A (Tc)
Customer Reference:
Power Dissipation (Max):
42W (Tc)
Technology:
MOSFET (Metal Oxide)
