Maximum Continuous Drain Current:
21 A
Transistor Material:
Si
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Drain Source Resistance:
48 Ω
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.4V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
6.5 nC @ 10 V
Channel Type:
N
Length:
6.73mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
33 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
2.39mm
Minimum Operating Temperature:
-55 °C
Detailed Description:
N-Channel 20V 21A (Ta) 3.3W (Ta), 33W (Tc) Surface Mount TO-252AA
Vgs(th) (Max) @ Id:
1.2V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number:
FDD653
Gate Charge (Qg) (Max) @ Vgs:
9nC @ 4.5V
Rds On (Max) @ Id, Vgs:
32mOhm @ 8A, 4.5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
710pF @ 10V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
TO-252AA
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
21A (Ta)
Customer Reference:
Power Dissipation (Max):
3.3W (Ta), 33W (Tc)
Technology:
MOSFET (Metal Oxide)
