Maximum Continuous Drain Current:
6.5 A
Transistor Material:
Si
Width:
5.59mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
24 nC @ 10 V
Channel Type:
N
Length:
6.73mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
135 W
Series:
UltraFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
2.39mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
28 mΩ
Manufacturer Standard Lead Time:
26 Weeks
Detailed Description:
N-Channel 100V 6.5A (Ta), 44A (Tc) 135W (Tc) Surface Mount TO-252AA
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number:
FDD367
Gate Charge (Qg) (Max) @ Vgs:
36nC @ 10V
Rds On (Max) @ Id, Vgs:
28mOhm @ 44A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
100V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1710pF @ 25V
Mounting Type:
Surface Mount
Series:
UltraFET™
Supplier Device Package:
TO-252AA
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
6.5A (Ta), 44A (Tc)
Customer Reference:
Power Dissipation (Max):
135W (Tc)
Technology:
MOSFET (Metal Oxide)
