Category:
Power MOSFET
Dimensions:
6.73 x 6.22 x 2.39mm
Maximum Continuous Drain Current:
6.8 A
Transistor Material:
Si
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.4V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
2.78 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
169 pF @ 50 V
Length:
6.73mm
Pin Count:
5
Typical Turn-Off Delay Time:
13 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
14.9 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
2.39mm
Typical Turn-On Delay Time:
7 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
375 mΩ
Detailed Description:
N-Channel 100V 6.8A (Tc) 14.9W (Tc) Surface Mount TO-252-4L
Vgs(th) (Max) @ Id:
2.8V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-5, DPak (4 Leads + Tab), TO-252AD
Base Part Number:
FDD160
Gate Charge (Qg) (Max) @ Vgs:
3.61nC @ 10V
Rds On (Max) @ Id, Vgs:
160mOhm @ 3.4A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
100V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
225pF @ 50V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
TO-252-4L
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
6.8A (Tc)
Customer Reference:
Power Dissipation (Max):
14.9W (Tc)
Technology:
MOSFET (Metal Oxide)
