ON Semiconductor FDC642P-F085

FDC642P-F085 ON Semiconductor
ON Semiconductor

Product Information

Detailed Description:
P-Channel 20V 4A (Ta) 1.2W (Ta) Surface Mount SuperSOT™-6
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Base Part Number:
FDC642
Gate Charge (Qg) (Max) @ Vgs:
16nC @ 4.5V
Rds On (Max) @ Id, Vgs:
65mOhm @ 4A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
640pF @ 10V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101, PowerTrench®
Supplier Device Package:
SuperSOT™-6
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
4A (Ta)
Customer Reference:
Power Dissipation (Max):
1.2W (Ta)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is FDC642P-F085. It features p-channel 20v 4a (ta) 1.2w (ta) surface mount supersot™-6. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sot-23-6 thin, tsot-23-6. Base Part Number: fdc642. The maximum gate charge and given voltages include 16nc @ 4.5v. It has a maximum Rds On and voltage of 65mohm @ 4a, 4.5v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 2.5v, 4.5v. The on semiconductor's product offers user-desired applications. The product has a 20v drain to source voltage. The maximum Vgs rate is ±8v. The product's input capacitance at maximum includes 640pf @ 10v. The product is available in surface mount configuration. The product automotive, aec-q101, powertrench®, is a highly preferred choice for users. supersot™-6 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 4a (ta). The product carries maximum power dissipation 1.2w (ta). This product use mosfet (metal oxide) technology.

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Mult Dev Assembly Trsf 7/Mar/2019(PCN Assembly/Origin)
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Logo 17/Aug/2017(PCN Design/Specification)
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FDC642P-F085(Datasheets)
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Binary Year Code Marking 15/Jan/2014(PCN Packaging)
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Mult Devices 24/Oct/2017(PCN Packaging)
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Mult Device Part Number Chg 30/May/2017(PCN Part Number)

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