ON Semiconductor FDC021N30

FDC021N30 ON Semiconductor
ON Semiconductor

Product Information

Detailed Description:
N-Channel 30V 6.1A (Ta) 700mW (Ta) Surface Mount SuperSOT™-6
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Base Part Number:
FDC021
Gate Charge (Qg) (Max) @ Vgs:
10.8nC @ 10V
Rds On (Max) @ Id, Vgs:
26mOhm @ 6.1A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
710pF @ 15V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
SuperSOT™-6
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
6.1A (Ta)
Customer Reference:
Power Dissipation (Max):
700mW (Ta)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is FDC021N30. It features n-channel 30v 6.1a (ta) 700mw (ta) surface mount supersot™-6. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sot-23-6 thin, tsot-23-6. Base Part Number: fdc021. The maximum gate charge and given voltages include 10.8nc @ 10v. It has a maximum Rds On and voltage of 26mohm @ 6.1a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The on semiconductor's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 710pf @ 15v. The product is available in surface mount configuration. The product powertrench®, is a highly preferred choice for users. supersot™-6 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 6.1a (ta). The product carries maximum power dissipation 700mw (ta). This product use mosfet (metal oxide) technology.

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Mult Changes 14/Jun/2019(PCN Assembly/Origin)
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Logo 17/Aug/2017(PCN Design/Specification)
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Mult Dev EOL 8/Apr/2021(PCN Obsolescence/ EOL)
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FDC021N30(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)

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