Maximum Continuous Drain Current:
240 A
Width:
11.78mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
4V
Package Type:
H-PSOF
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
47 nC @ 10 V
Channel Type:
N
Length:
9.9mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
300 W
Maximum Gate Source Voltage:
±20 V
Height:
2.4mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.25V
Maximum Drain Source Resistance:
4.1 mΩ
Manufacturer Standard Lead Time:
51 Weeks
Detailed Description:
N-Channel 100V 185A (Tc) 300W (Ta) Surface Mount 8-HPSOF
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerSFN
Base Part Number:
FDBL86066
Gate Charge (Qg) (Max) @ Vgs:
69nC @ 10V
Rds On (Max) @ Id, Vgs:
4.1mOhm @ 80A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
100V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
3240pF @ 50V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
8-HPSOF
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
185A (Tc)
Customer Reference:
Power Dissipation (Max):
300W (Ta)
Technology:
MOSFET (Metal Oxide)
This is manufactured by ON Semiconductor. The manufacturer part number is FDBL86066-F085. While 240 a of maximum continuous drain current. Furthermore, the product is 11.78mm wide. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of h-psof. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 47 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 9.9mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 300 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. In addition, the height is 2.4mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.25v . It provides up to 4.1 mω maximum drain source resistance. It has typical 51 weeks of manufacturer standard lead time. It features n-channel 100v 185a (tc) 300w (ta) surface mount 8-hpsof. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in 8-powersfn. Base Part Number: fdbl86066. The maximum gate charge and given voltages include 69nc @ 10v. It has a maximum Rds On and voltage of 4.1mohm @ 80a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The on semiconductor's product offers user-desired applications. The product has a 100v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 3240pf @ 50v. The product powertrench®, is a highly preferred choice for users. 8-hpsof is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 185a (tc). The product carries maximum power dissipation 300w (ta). This product use mosfet (metal oxide) technology.
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