ON Semiconductor FDB9503L_F085

FDB9503L_F085 ON Semiconductor
ON Semiconductor

Product Information

Rds On (Max) @ Id, Vgs:
2.6 mOhm @ 80A, 10V
Detailed Description:
P-Channel 40V 110A (Tc) 333W (Tj) Surface Mount D²PAK (TO-263AB)
Input Capacitance (Ciss) (Max) @ Vds:
8320pF @ 20V
Gate Charge (Qg) (Max) @ Vgs:
255nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
3V @ 250µA
Series:
Automotive, AEC-Q101, PowerTrench®
Vgs (Max):
±16V
Standard Package:
800
Supplier Device Package:
D²PAK (TO-263AB)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Tape & Reel (TR)
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
P-Channel
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max):
333W (Tj)
Drain to Source Voltage (Vdss):
40V
Current - Continuous Drain (Id) @ 25°C:
110A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is FDB9503L_F085. It has a maximum Rds On and voltage of 2.6 mohm @ 80a, 10v. It features p-channel 40v 110a (tc) 333w (tj) surface mount d²pak (to-263ab). The product's input capacitance at maximum includes 8320pf @ 20v. The maximum gate charge and given voltages include 255nc @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product automotive, aec-q101, powertrench®, is a highly preferred choice for users. The maximum Vgs rate is ±16v. It is available in the standard package of 800. d²pak (to-263ab) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tape & reel (tr) is the available packaging type of the product. The product has -55°c ~ 175°c (tj) operating temperature range. It carries FET type p-channel. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. The product carries maximum power dissipation 333w (tj). The product has a 40v drain to source voltage. The continuous current drain at 25°C is 110a (tc). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.

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FDB9503L_F085(Datasheets)
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Logo 17/Aug/2017(PCN Design/Specification)
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Mult Devices 24/Oct/2017(PCN Packaging)

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