ON Semiconductor FDB8132_F085

ON Semiconductor

Product Information

Detailed Description:
N-Channel 30V 80A (Tc) 341W (Tc) Surface Mount D²PAK (TO-263)
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number:
FDB813
Gate Charge (Qg) (Max) @ Vgs:
350nC @ 13V
Rds On (Max) @ Id, Vgs:
1.6mOhm @ 80A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
14100pF @ 15V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101, PowerTrench®
Supplier Device Package:
D²PAK (TO-263)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
Customer Reference:
Power Dissipation (Max):
341W (Tc)
Technology:
MOSFET (Metal Oxide)
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This is manufactured by ON Semiconductor. The manufacturer part number is FDB8132_F085. It features n-channel 30v 80a (tc) 341w (tc) surface mount d²pak (to-263). The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. Base Part Number: fdb813. The maximum gate charge and given voltages include 350nc @ 13v. It has a maximum Rds On and voltage of 1.6mohm @ 80a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The on semiconductor's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 14100pf @ 15v. The product is available in surface mount configuration. The product automotive, aec-q101, powertrench®, is a highly preferred choice for users. d²pak (to-263) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 80a (tc). The product carries maximum power dissipation 341w (tc). This product use mosfet (metal oxide) technology.

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FDB8132_F085(Datasheets)

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