ON Semiconductor FCPF22N60NT

FCPF22N60NT ON Semiconductor
ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
14 Weeks
Detailed Description:
N-Channel 600V 22A (Tc) 39W (Tc) Through Hole TO-220F
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Base Part Number:
FCPF22
Gate Charge (Qg) (Max) @ Vgs:
45nC @ 10V
Rds On (Max) @ Id, Vgs:
165mOhm @ 11A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
600V
Vgs (Max):
±45V
Input Capacitance (Ciss) (Max) @ Vds:
1950pF @ 100V
Mounting Type:
Through Hole
Series:
SupreMOS™
Supplier Device Package:
TO-220F
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
22A (Tc)
Customer Reference:
Power Dissipation (Max):
39W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is FCPF22N60NT. It has typical 14 weeks of manufacturer standard lead time. It features n-channel 600v 22a (tc) 39w (tc) through hole to-220f. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack. Base Part Number: fcpf22. The maximum gate charge and given voltages include 45nc @ 10v. It has a maximum Rds On and voltage of 165mohm @ 11a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The on semiconductor's product offers user-desired applications. The product has a 600v drain to source voltage. The maximum Vgs rate is ±45v. The product's input capacitance at maximum includes 1950pf @ 100v. The product is available in through hole configuration. The product supremos™, is a highly preferred choice for users. to-220f is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 22a (tc). The product carries maximum power dissipation 39w (tc). This product use mosfet (metal oxide) technology.

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Mold Compound Change 25/Sep/2019(PCN Assembly/Origin)
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Logo 17/Aug/2017(PCN Design/Specification)
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FCP(F)22N60N(T)(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)

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