Category:
Power MOSFET
Dimensions:
10.16 x 4.7 x 15.9mm
Maximum Continuous Drain Current:
10.8 A
Transistor Material:
Si
Width:
4.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Package Type:
TO-220F
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
27.4 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1130 pF@ 100 V
Length:
10.16mm
Pin Count:
3
Typical Turn-Off Delay Time:
42 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
32.1 W
Series:
SupreMOS
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
15.9mm
Typical Turn-On Delay Time:
13.6 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
299 mΩ
Manufacturer Standard Lead Time:
24 Weeks
Detailed Description:
N-Channel 600V 10.8A (Tc) 32.1W (Tc) Through Hole TO-220F-3
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Base Part Number:
FCPF11
Gate Charge (Qg) (Max) @ Vgs:
35.6nC @ 10V
Rds On (Max) @ Id, Vgs:
299mOhm @ 5.4A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
600V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
1505pF @ 100V
Mounting Type:
Through Hole
Series:
SuperMOS™
Supplier Device Package:
TO-220F-3
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
10.8A (Tc)
Customer Reference:
Power Dissipation (Max):
32.1W (Tc)
Technology:
MOSFET (Metal Oxide)
