ON Semiconductor FCD260N65S3

FCD260N65S3 ON Semiconductor
ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
52 Weeks
Detailed Description:
N-Channel 650V 12A (Tc) 90W (Tc) Surface Mount TO-252AA
Vgs(th) (Max) @ Id:
4.5V @ 1.2mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number:
FCD260
Gate Charge (Qg) (Max) @ Vgs:
24nC @ 10V
Rds On (Max) @ Id, Vgs:
260mOhm @ 6A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
650V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
1010pF @ 400V
Mounting Type:
Surface Mount
Series:
SuperFET® III
Supplier Device Package:
TO-252AA
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
12A (Tc)
Customer Reference:
Power Dissipation (Max):
90W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is FCD260N65S3. It has typical 52 weeks of manufacturer standard lead time. It features n-channel 650v 12a (tc) 90w (tc) surface mount to-252aa. The typical Vgs (th) (max) of the product is 4.5v @ 1.2ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. Base Part Number: fcd260. The maximum gate charge and given voltages include 24nc @ 10v. It has a maximum Rds On and voltage of 260mohm @ 6a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The on semiconductor's product offers user-desired applications. The product has a 650v drain to source voltage. The maximum Vgs rate is ±30v. The product's input capacitance at maximum includes 1010pf @ 400v. The product is available in surface mount configuration. The product superfet® iii, is a highly preferred choice for users. to-252aa is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 12a (tc). The product carries maximum power dissipation 90w (tc). This product use mosfet (metal oxide) technology.

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Mult Dev 13/Aug/2020(PCN Assembly/Origin)
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SuperFet Datasheet Chg 30/Jul/2019(PCN Design/Specification)
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FCD260N65S3(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)

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