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ON Semiconductor FCB260N65S3

FCB260N65S3 ON Semiconductor
ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
20 Weeks
Detailed Description:
N-Channel 650V 12A (Tc) 90W (Tc) Surface Mount D²PAK (TO-263)
Vgs(th) (Max) @ Id:
4.5V @ 1.2mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number:
FCB260
Gate Charge (Qg) (Max) @ Vgs:
24nC @ 10V
Rds On (Max) @ Id, Vgs:
260mOhm @ 6A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
650V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
1010pF @ 400V
Mounting Type:
Surface Mount
Series:
SuperFET® III
Supplier Device Package:
D²PAK (TO-263)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
12A (Tc)
Customer Reference:
Power Dissipation (Max):
90W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is FCB260N65S3. It has typical 20 weeks of manufacturer standard lead time. It features n-channel 650v 12a (tc) 90w (tc) surface mount d²pak (to-263). The typical Vgs (th) (max) of the product is 4.5v @ 1.2ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. Base Part Number: fcb260. The maximum gate charge and given voltages include 24nc @ 10v. It has a maximum Rds On and voltage of 260mohm @ 6a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The on semiconductor's product offers user-desired applications. The product has a 650v drain to source voltage. The maximum Vgs rate is ±30v. The product's input capacitance at maximum includes 1010pf @ 400v. The product is available in surface mount configuration. The product superfet® iii, is a highly preferred choice for users. d²pak (to-263) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 12a (tc). The product carries maximum power dissipation 90w (tc). This product use mosfet (metal oxide) technology.

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Mult Dev Site Chgs 17/Sep/2020(PCN Assembly/Origin)
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SuperFet Datasheet Chg 30/Jul/2019(PCN Design/Specification)
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FCB260N65S3(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)

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A transistor is a semiconductor device that is used to amplify or switch electrical impulses such as ON Semiconductor FCB260N65S3. The transistor is a fundamental component of contemporary electronics Transistors - FETs, MOSFETs - Single. Our potential items have been shown to be the best in the world, and we provide overnight shipping for the purchase you made over here ON Semiconductor FCB260N65S3. If you have any questions regarding the Transistors - FETs, MOSFETs - Single, please contact us by emailing sales@enrgtech.co.uk or calling +44 (0) 3303 800 157.



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