ON Semiconductor FCB110N65F

FCB110N65F ON Semiconductor
ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
45 Weeks
Detailed Description:
N-Channel 650V 35A (Tc) 357W (Tc) Surface Mount D²PAK
Vgs(th) (Max) @ Id:
5V @ 3.5mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number:
FCB110
Gate Charge (Qg) (Max) @ Vgs:
145nC @ 10V
Rds On (Max) @ Id, Vgs:
110mOhm @ 17.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
650V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4895pF @ 100V
Mounting Type:
Surface Mount
Series:
FRFET®, SuperFET® II
Supplier Device Package:
D²PAK
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
35A (Tc)
Customer Reference:
Power Dissipation (Max):
357W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is FCB110N65F. It has typical 45 weeks of manufacturer standard lead time. It features n-channel 650v 35a (tc) 357w (tc) surface mount d²pak. The typical Vgs (th) (max) of the product is 5v @ 3.5ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. Base Part Number: fcb110. The maximum gate charge and given voltages include 145nc @ 10v. It has a maximum Rds On and voltage of 110mohm @ 17.5a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The on semiconductor's product offers user-desired applications. The product has a 650v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 4895pf @ 100v. The product is available in surface mount configuration. The product frfet®, superfet® ii, is a highly preferred choice for users. d²pak is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 35a (tc). The product carries maximum power dissipation 357w (tc). This product use mosfet (metal oxide) technology.

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Mult Dev Assembly/Material Chgs 15/Mar/2018(PCN Assembly/Origin)
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Description Chg 01/Apr/2016(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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FCB110N65F(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)
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TO263 31/Aug/2016(PCN Packaging)

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