ON Semiconductor BS270
Product Information
Maximum Drain Source Voltage:
60 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
625 mW
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
4.7mm
Width:
3.93mm
Length:
4.7mm
Minimum Gate Threshold Voltage:
1V
Package Type:
TO-92
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
400 mA
Transistor Material:
Si
Maximum Drain Source Resistance:
3.5 Ω
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
49 Weeks
Base Part Number:
BS270
Detailed Description:
N-Channel 60V 400mA (Ta) 625mW (Ta) Through Hole TO-92-3
Input Capacitance (Ciss) (Max) @ Vds:
50pF @ 25V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
2Ohm @ 500mA, 10V
Supplier Device Package:
TO-92-3
Packaging:
Bulk
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
Power Dissipation (Max):
625mW (Ta)
Current - Continuous Drain (Id) @ 25°C:
400mA (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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FAQs
Yes. You can also search BS270 on website for other similar products.
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You can order ON Semiconductor brand products with BS270 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - FETs, MOSFETs - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of ON Semiconductor BS270. You can also check on our website or by contacting our customer support team for further order details on ON Semiconductor BS270.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET14514195 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14514195.
Yes. We ship BS270 Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is BS270. It has a maximum of 60 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 625 mw maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 4.7mm. Furthermore, the product is 3.93mm wide. Its accurate length is 4.7mm. Whereas its minimum gate threshold voltage includes 1v. The package is a sort of to-92. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 400 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 3.5 ω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 49 weeks of manufacturer standard lead time. Base Part Number: bs270. It features n-channel 60v 400ma (ta) 625mw (ta) through hole to-92-3. The product's input capacitance at maximum includes 50pf @ 25v. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product has a 60v drain to source voltage. The maximum Vgs rate is ±20v. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It has a maximum Rds On and voltage of 2ohm @ 500ma, 10v. to-92-3 is the supplier device package value. In addition, bulk is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-226-3, to-92-3 (to-226aa). The product carries maximum power dissipation 625mw (ta). The continuous current drain at 25°C is 400ma (ta). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.
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