ON Semiconductor 5LN01SP

5LN01SP ON Semiconductor
ON Semiconductor

Product Information

Base Part Number:
5LN01
Detailed Description:
N-Channel 50V 100mA (Ta) 250mW (Ta) Through Hole 3-SPA
Input Capacitance (Ciss) (Max) @ Vds:
6.6pF @ 10V
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
1.3V @ 100µA
Drain to Source Voltage (Vdss):
50V
Vgs (Max):
±10V
Gate Charge (Qg) (Max) @ Vgs:
1.57nC @ 10V
Rds On (Max) @ Id, Vgs:
7.8Ohm @ 50mA, 4V
Supplier Device Package:
3-SPA
Packaging:
Bulk
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
SC-72
Power Dissipation (Max):
250mW (Ta)
Current - Continuous Drain (Id) @ 25°C:
100mA (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is 5LN01SP. Base Part Number: 5ln01. It features n-channel 50v 100ma (ta) 250mw (ta) through hole 3-spa. The product's input capacitance at maximum includes 6.6pf @ 10v. The drive voltage (maximum and minimum Rds On) of the product includes 1.5v, 4v. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 1.3v @ 100µa. The product has a 50v drain to source voltage. The maximum Vgs rate is ±10v. The maximum gate charge and given voltages include 1.57nc @ 10v. It has a maximum Rds On and voltage of 7.8ohm @ 50ma, 4v. 3-spa is the supplier device package value. In addition, bulk is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in sc-72. The product carries maximum power dissipation 250mw (ta). The continuous current drain at 25°C is 100ma (ta). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.

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EOL 21/Apr/2016(PCN Obsolescence/ EOL)
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5LN01SP(Datasheets)

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