Category:
Power MOSFET
Dimensions:
6.5 x 3.56 x 1.6mm
Maximum Continuous Drain Current:
3.7 A
Transistor Material:
Si
Width:
3.56mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Drain Source Resistance:
120 mΩ
Package Type:
SOT-223
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
14 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
632 pF@ 50 V
Length:
6.5mm
Pin Count:
3
Typical Turn-Off Delay Time:
23 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
3 W
Series:
PowerTrench
Maximum Gate Source Voltage:
±20 V
Height:
1.6mm
Typical Turn-On Delay Time:
8.5 ns
Minimum Operating Temperature:
-55 °C
FET Feature:
-
HTSUS:
0000.00.0000
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-261-4, TO-261AA
Gate Charge (Qg) (Max) @ Vgs:
20 nC @ 10 V
Rds On (Max) @ Id, Vgs:
120mOhm @ 3.7A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Package:
Bulk
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
632 pF @ 50 V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
SOT-223-4
Current - Continuous Drain (Id) @ 25°C:
3.7A (Ta)
Power Dissipation (Max):
3W (Ta)
Technology:
MOSFET (Metal Oxide)
