Category:
Power MOSFET
Dimensions:
2 x 2 x 0.725mm
Maximum Continuous Drain Current:
9 A
Transistor Material:
Si
Width:
2mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Package Type:
MLP
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
9.3 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
570 pF @ 15 V
Length:
2mm
Pin Count:
6
Forward Transconductance:
35S
Typical Turn-Off Delay Time:
14 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.4 W
Series:
PowerTrench
Maximum Gate Source Voltage:
±20 V
Height:
0.725mm
Typical Turn-On Delay Time:
6 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
32 mΩ
FET Feature:
-
HTSUS:
8542.39.0001
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-WDFN Exposed Pad
Gate Charge (Qg) (Max) @ Vgs:
13 nC @ 10 V
Rds On (Max) @ Id, Vgs:
21mOhm @ 9A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Bulk
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Power Dissipation (Max):
2.4W (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
760 pF @ 15 V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
6-MicroFET (2x2)
Current - Continuous Drain (Id) @ 25°C:
9A (Ta)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
