Category:
Power MOSFET
Dimensions:
10.67 x 11.33 x 4.83mm
Maximum Continuous Drain Current:
79 A
Transistor Material:
Si
Width:
11.33mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
150 V
Package Type:
TO-263AB
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
82 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
5870 pF@ 25 V
Length:
10.67mm
Pin Count:
3
Typical Turn-Off Delay Time:
39 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
310 W
Maximum Gate Source Voltage:
±20 V
Height:
4.83mm
Typical Turn-On Delay Time:
16 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
48 mΩ
FET Feature:
-
HTSUS:
8542.39.0001
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
107 nC @ 10 V
Rds On (Max) @ Id, Vgs:
16mOhm @ 33A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Package:
Bulk
Drain to Source Voltage (Vdss):
150 V
Vgs (Max):
±20V
Power Dissipation (Max):
310W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
5870 pF @ 25 V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
D2PAK (TO-263)
Current - Continuous Drain (Id) @ 25°C:
8A (Ta), 79A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDB253
ECCN:
EAR99
