Fairchild Semiconductor FCP190N65F
Product Information
FET Feature:
-
HTSUS:
8542.39.0001
Vgs(th) (Max) @ Id:
5V @ 2mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
78 nC @ 10 V
Rds On (Max) @ Id, Vgs:
190mOhm @ 10A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±20V
Power Dissipation (Max):
208W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
3225 pF @ 25 V
Mounting Type:
Through Hole
Series:
FRFET®, SuperFET® II
Supplier Device Package:
TO-220-3
Current - Continuous Drain (Id) @ 25°C:
20.6A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FCP190
ECCN:
EAR99
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Yes. We ship FCP190N65F Internationally to many countries around the world.
This is manufactured by Fairchild Semiconductor. The manufacturer part number is FCP190N65F. It is assigned with possible HTSUS value of 8542.39.0001. The typical Vgs (th) (max) of the product is 5v @ 2ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. The maximum gate charge and given voltages include 78 nc @ 10 v. It has a maximum Rds On and voltage of 190mohm @ 10a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 650 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 208w (tc). The product's input capacitance at maximum includes 3225 pf @ 25 v. The product is available in through hole configuration. The product frfet®, superfet® ii, is a highly preferred choice for users. to-220-3 is the supplier device package value. The continuous current drain at 25°C is 20.6a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to fcp190, a base product number of the product. The product is designated with the ear99 code number.
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