Category:
Power MOSFET
Dimensions:
9.9 x 4.5 x 9.2mm
Maximum Continuous Drain Current:
3.9 A
Transistor Material:
Si
Width:
4.5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
800 V
Maximum Gate Threshold Voltage:
5V
Package Type:
I2PAK
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
19 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
680 pF@ 25 V
Length:
9.9mm
Pin Count:
3
Typical Turn-Off Delay Time:
35 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
3.13 W
Series:
QFET
Maximum Gate Source Voltage:
±30 V
Height:
9.2mm
Typical Turn-On Delay Time:
16 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
3.6 Ω
FET Feature:
-
HTSUS:
8542.39.0001
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-262-3 Long Leads, I2PAK, TO-262AA
Rds On (Max) @ Id, Vgs:
3.6Ohm @ 1.95A, 10V
Gate Charge (Qg) (Max) @ Vgs:
25 nC @ 10 V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
800 V
Vgs (Max):
±30V
Power Dissipation (Max):
3.13W (Ta), 130W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
880 pF @ 25 V
Mounting Type:
Through Hole
Series:
QFET®
Supplier Device Package:
TO-262 (I2PAK)
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
3.9A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
