Category:
Power MOSFET
Dimensions:
2.92 x 1.3 x 0.93mm
Maximum Continuous Drain Current:
120 mA
Transistor Material:
Si
Width:
1.3mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
25 V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.65V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
0.22 nC @ 4.5 V
Channel Type:
P
Typical Input Capacitance @ Vds:
11 pF@ 10 V
Length:
2.92mm
Pin Count:
3
Typical Turn-Off Delay Time:
9 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
0.35 W
Maximum Gate Source Voltage:
8 V
Height:
0.93mm
Typical Turn-On Delay Time:
5 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
10 Ω
FET Feature:
-
HTSUS:
0000.00.0000
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs:
0.31 nC @ 4.5 V
Rds On (Max) @ Id, Vgs:
10Ohm @ 200mA, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.7V, 4.5V
Package:
Bulk
Drain to Source Voltage (Vdss):
25 V
Vgs (Max):
-8V
Power Dissipation (Max):
350mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
11000 pF @ 10 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-23
Current - Continuous Drain (Id) @ 25°C:
120mA (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDV30
