Category:
Power MOSFET
Dimensions:
5.1 x 6.25 x 1.05mm
Maximum Continuous Drain Current:
200 A
Transistor Material:
Si
Width:
6.25mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Package Type:
Power 56
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
173 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
12500 pF @ 20 V
Length:
5.1mm
Pin Count:
8
Typical Turn-Off Delay Time:
83 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
113 W
Series:
PowerTrench
Maximum Gate Source Voltage:
±20 V
Height:
1.05mm
Typical Turn-On Delay Time:
29 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
1.2 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs:
242 nC @ 10 V
RoHS Status:
RoHS non-compliant
REACH Status:
Vendor Undefined
Rds On (Max) @ Id, Vgs:
0.85mOhm @ 47A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Bulk
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Power Dissipation (Max):
2.7W (Ta), 113W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
17500 pF @ 20 V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
Power56
Current - Continuous Drain (Id) @ 25°C:
47A (Ta), 290A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
