Category:
Power MOSFET
Dimensions:
2.92 x 1.3 x 0.93mm
Maximum Continuous Drain Current:
220 mA
Transistor Material:
Si
Width:
1.3mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
50 V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.6V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
2.4 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
58 pF@ 25 V
Length:
2.92mm
Pin Count:
3
Typical Turn-Off Delay Time:
60 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
0.35 W
Maximum Gate Source Voltage:
±12 V
Height:
0.93mm
Typical Turn-On Delay Time:
5 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
2.5 Ω
FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1.2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs:
2.4 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
Rds On (Max) @ Id, Vgs:
1.6Ohm @ 50mA, 5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 2.5V
Package:
Bulk
Drain to Source Voltage (Vdss):
50 V
Vgs (Max):
±12V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
58 pF @ 25 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-23-3
Current - Continuous Drain (Id) @ 25°C:
220mA (Ta)
Power Dissipation (Max):
350mW (Ta)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
