Dimensions:
15.87 x 4.82 x 20.82mm
Maximum Continuous Drain Current:
22 A
Transistor Material:
Si
Width:
4.82mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Package Type:
TO-247
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
42 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
2150 pF @ 380 V
Length:
15.87mm
Pin Count:
3
Typical Turn-Off Delay Time:
55 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
227 W
Series:
SuperFET II
Maximum Gate Source Voltage:
±20 V dc, ±30 V ac
Height:
20.82mm
Typical Turn-On Delay Time:
21 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
170 mΩ
FET Feature:
-
HTSUS:
8542.39.0001
Vgs(th) (Max) @ Id:
3.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3
Rds On (Max) @ Id, Vgs:
170mOhm @ 11A, 10V
Gate Charge (Qg) (Max) @ Vgs:
55 nC @ 10 V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±20V
Power Dissipation (Max):
227W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2860 pF @ 380 V
Mounting Type:
Through Hole
Series:
SuperFET® II
Supplier Device Package:
TO-247
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
22A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
