Category:
Power MOSFET
Dimensions:
6.73 x 6.22 x 2.38mm
Maximum Continuous Drain Current:
2.6 A
Transistor Material:
Si
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
200 V
Package Type:
DPAK
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
8.2 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
140 pF @ 25 V
Length:
6.73mm
Pin Count:
3
Forward Transconductance:
0.8S
Typical Turn-Off Delay Time:
14 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
25 W
Maximum Gate Source Voltage:
±20 V
Height:
2.38mm
Typical Turn-On Delay Time:
8.2 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
2V
Maximum Drain Source Resistance:
1.5 Ω
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs:
1.5Ohm @ 1.6A, 10V
Gate Charge (Qg) (Max) @ Vgs:
8.2 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Affected
edacadModel:
IRFR210PBF Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/856716
Package:
Tube
Drain to Source Voltage (Vdss):
200 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
2.5W (Ta), 25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
140 pF @ 25 V
standardLeadTime:
8 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
DPAK
Current - Continuous Drain (Id) @ 25°C:
2.6A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IRFR210
ECCN:
EAR99
