Category:
Power MOSFET
Dimensions:
3.3 x 3.3 x 0.75mm
Maximum Continuous Drain Current:
55 A
Transistor Material:
Si
Width:
3.3mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Package Type:
MLP
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
45 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
3420 pF@ 30 V
Length:
3.3mm
Pin Count:
8
Typical Turn-Off Delay Time:
32 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
40 W
Series:
PowerTrench
Maximum Gate Source Voltage:
±20 V
Height:
0.75mm
Typical Turn-On Delay Time:
15 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
11.7 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerWDFN
Gate Charge (Qg) (Max) @ Vgs:
64 nC @ 10 V
Rds On (Max) @ Id, Vgs:
7.9mOhm @ 13.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Bulk
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Power Dissipation (Max):
2.3W (Ta), 40W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
4550 pF @ 30 V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
8-MLP (3.3x3.3)
Current - Continuous Drain (Id) @ 25°C:
13.5A (Ta), 22A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
