Category:
Power MOSFET
Dimensions:
3 x 1.7 x 1mm
Maximum Continuous Drain Current:
4.5 A
Transistor Material:
Si
Width:
1.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.4V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
10 nC @ 4.5 V
Channel Type:
P
Typical Input Capacitance @ Vds:
1160 pF @ -10 V
Length:
3mm
Pin Count:
6
Typical Turn-Off Delay Time:
33 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.6 W
Series:
PowerTrench
Maximum Gate Source Voltage:
±8 V
Height:
1mm
Typical Turn-On Delay Time:
12 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
72 mΩ
FET Feature:
-
HTSUS:
8542.39.0001
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Gate Charge (Qg) (Max) @ Vgs:
14 nC @ 4.5 V
Rds On (Max) @ Id, Vgs:
48mOhm @ 4.5A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Package:
Bulk
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±8V
Power Dissipation (Max):
1.6W (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
1160 pF @ 10 V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
SuperSOT™-6
Current - Continuous Drain (Id) @ 25°C:
4.5A (Ta)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
