Maximum Continuous Drain Current:
3.1 A
Transistor Material:
Si
Width:
0.6mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
1.1V
Maximum Drain Source Resistance:
250 mΩ
Package Type:
PICOSTAR
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.65V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
1.04 nC @ 4.5 V
Channel Type:
N
Length:
1mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
500 mW
Series:
FemtoFET
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
0.35mm
Minimum Operating Temperature:
-55 °C
FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1.1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
3-XFDFN
Rds On (Max) @ Id, Vgs:
109mOhm @ 500mA, 8A
Gate Charge (Qg) (Max) @ Vgs:
1.35 nC @ 4.5 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
CSD17381F4 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
edacadModelUrl:
/en/models/4091141
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
12V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
500mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
195 pF @ 15 V
standardLeadTime:
6 Weeks
Mounting Type:
Surface Mount
Series:
NexFET™
Supplier Device Package:
3-PICOSTAR
Current - Continuous Drain (Id) @ 25°C:
3.1A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
CSD17381
ECCN:
EAR99
