Fairchild Semiconductor FDC658AP

FDC658AP Fairchild Semiconductor
Fairchild Semiconductor

Product Information

FET Feature:
-
HTSUS:
8542.39.0001
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Gate Charge (Qg) (Max) @ Vgs:
8.1 nC @ 5 V
Rds On (Max) @ Id, Vgs:
50mOhm @ 4A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Bulk
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±25V
Power Dissipation (Max):
1.6W (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
470 pF @ 15 V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
SuperSOT™-6
Current - Continuous Drain (Id) @ 25°C:
4A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDC658
ECCN:
EAR99
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This is manufactured by Fairchild Semiconductor. The manufacturer part number is FDC658AP. It is assigned with possible HTSUS value of 8542.39.0001. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sot-23-6 thin, tsot-23-6. The maximum gate charge and given voltages include 8.1 nc @ 5 v. It has a maximum Rds On and voltage of 50mohm @ 4a, 10v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in bulk package . The product has a 30 v drain to source voltage. The maximum Vgs rate is ±25v. The product carries maximum power dissipation 1.6w (ta). The product's input capacitance at maximum includes 470 pf @ 15 v. The product is available in surface mount configuration. The product powertrench®, is a highly preferred choice for users. supersot™-6 is the supplier device package value. The continuous current drain at 25°C is 4a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to fdc658, a base product number of the product. The product is designated with the ear99 code number.

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