Dimensions:
3.4 x 3.4 x 1mm
Maximum Continuous Drain Current:
16.5 A
Transistor Material:
Si
Width:
3.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
25 V
Package Type:
Power 33
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.8V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
12 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1228 pF @ 13 V
Length:
3.4mm
Pin Count:
8
Typical Turn-Off Delay Time:
25 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
26 W
Series:
PowerTrench
Maximum Gate Source Voltage:
±12 V
Height:
1mm
Typical Turn-On Delay Time:
8 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
6.9 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
1.8V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs:
12 nC @ 4.5 V
Rds On (Max) @ Id, Vgs:
5mOhm @ 17A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Bulk
Drain to Source Voltage (Vdss):
25 V
Vgs (Max):
±12V
Power Dissipation (Max):
2.4W (Ta), 26W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1228 pF @ 13 V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
Power33
Current - Continuous Drain (Id) @ 25°C:
16.5A (Ta), 40A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDMC85
ECCN:
EAR99
