Dimensions:
4.9 x 3.9 x 1.575mm
Maximum Continuous Drain Current:
3.4 A
Transistor Material:
Si
Width:
3.9mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Package Type:
SOIC
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
2.4 nC @ 5 V
Channel Type:
P
Typical Input Capacitance @ Vds:
205 pF@ -15 V
Length:
4.9mm
Pin Count:
8
Typical Turn-Off Delay Time:
11 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.5 W
Series:
PowerTrench
Maximum Gate Source Voltage:
±25 V
Height:
1.575mm
Typical Turn-On Delay Time:
4.5 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
210 mΩ
FET Feature:
-
HTSUS:
8542.39.0001
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
130mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs:
3.5 nC @ 5 V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±25V
Power Dissipation (Max):
2.5W (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
205 pF @ 15 V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
8-SOIC
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
3.4A (Ta)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
