Fairchild Semiconductor FDS6670AS

FDS6670AS Fairchild Semiconductor
Fairchild Semiconductor

Product Information

FET Feature:
-
HTSUS:
8542.39.0001
Vgs(th) (Max) @ Id:
3V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) (Max) @ Vgs:
38 nC @ 10 V
Rds On (Max) @ Id, Vgs:
9mOhm @ 13.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Bulk
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Power Dissipation (Max):
2.5W (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
1540 pF @ 15 V
Mounting Type:
Surface Mount
Series:
PowerTrench®, SyncFET™
Supplier Device Package:
8-SOIC
Current - Continuous Drain (Id) @ 25°C:
13.5A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDS66
ECCN:
EAR99
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This is manufactured by Fairchild Semiconductor. The manufacturer part number is FDS6670AS. It is assigned with possible HTSUS value of 8542.39.0001. The typical Vgs (th) (max) of the product is 3v @ 1ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). The maximum gate charge and given voltages include 38 nc @ 10 v. It has a maximum Rds On and voltage of 9mohm @ 13.5a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in bulk package . The product has a 30 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 2.5w (ta). The product's input capacitance at maximum includes 1540 pf @ 15 v. The product is available in surface mount configuration. The product powertrench®, syncfet™, is a highly preferred choice for users. 8-soic is the supplier device package value. The continuous current drain at 25°C is 13.5a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to fds66, a base product number of the product. The product is designated with the ear99 code number.

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