Category:
Power MOSFET
Dimensions:
10.67 x 11.33 x 4.83mm
Maximum Continuous Drain Current:
54 A
Transistor Material:
Si
Width:
11.33mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Package Type:
TO-263AB
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
22 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1240 pF@ 15 V
Length:
10.67mm
Pin Count:
3
Typical Turn-Off Delay Time:
47 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
55 W
Series:
PowerTrench
Maximum Gate Source Voltage:
±20 V
Height:
4.83mm
Typical Turn-On Delay Time:
8 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
19 mΩ
FET Feature:
-
HTSUS:
0000.00.0000
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
11.6mOhm @ 40A, 10V
Gate Charge (Qg) (Max) @ Vgs:
29 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Affected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Bulk
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
55W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1240 pF @ 15 V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
TO-263AB
Current - Continuous Drain (Id) @ 25°C:
11A (Ta), 54A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDB888
ECCN:
EAR99
