Fairchild Semiconductor FDPF18N20FT

FDPF18N20FT Fairchild Semiconductor
Fairchild Semiconductor

Product Information

FET Feature:
-
HTSUS:
0000.00.0000
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Gate Charge (Qg) (Max) @ Vgs:
26 nC @ 10 V
Rds On (Max) @ Id, Vgs:
140mOhm @ 9A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
200 V
Vgs (Max):
±30V
Power Dissipation (Max):
41W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1180 pF @ 25 V
Mounting Type:
Through Hole
Series:
UniFET™
Supplier Device Package:
TO-220F-3
Current - Continuous Drain (Id) @ 25°C:
18A (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Fairchild Semiconductor. The manufacturer part number is FDPF18N20FT. It is assigned with possible HTSUS value of 0000.00.0000. The typical Vgs (th) (max) of the product is 5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack. The maximum gate charge and given voltages include 26 nc @ 10 v. It has a maximum Rds On and voltage of 140mohm @ 9a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 200 v drain to source voltage. The maximum Vgs rate is ±30v. The product carries maximum power dissipation 41w (tc). The product's input capacitance at maximum includes 1180 pf @ 25 v. The product is available in through hole configuration. The product unifet™, is a highly preferred choice for users. to-220f-3 is the supplier device package value. The continuous current drain at 25°C is 18a (tc). This product use mosfet (metal oxide) technology.

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FDPF18N20FT Datasheet(Datasheets)

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