Category:
Power MOSFET
Dimensions:
6.6 x 6.2 x 2.4mm
Maximum Continuous Drain Current:
5 A
Transistor Material:
Si
Width:
6.2mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
200 V
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
800 mΩ
Package Type:
TO-252
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
19 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
350 pF @ 25 V
Length:
6.6mm
Pin Count:
3
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
45 W
Series:
STripFET
Maximum Gate Source Voltage:
±20 V
Height:
2.4mm
Typical Turn-On Delay Time:
18 ns
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
150°C (TJ)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs:
800mOhm @ 2.5A, 10V
title:
STD5N20T4
Vgs(th) (Max) @ Id:
4V @ 250µA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
200 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
45W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
350 pF @ 25 V
Mounting Type:
Surface Mount
Series:
MESH OVERLAY™
Gate Charge (Qg) (Max) @ Vgs:
27 nC @ 10 V
Supplier Device Package:
DPAK
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
5A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STD5N
ECCN:
EAR99
