Maximum Continuous Drain Current:
160 mA
Width:
2.6mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
500 V
Maximum Gate Threshold Voltage:
3.5V
Package Type:
SOT-89
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.5V
Maximum Operating Temperature:
+150 °C
Channel Type:
P
Length:
4.6mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.6 W
Series:
VP2450
Maximum Gate Source Voltage:
20 V
Height:
1.6mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.8V
Maximum Drain Source Resistance:
35 Ω
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-243AA
Rds On (Max) @ Id, Vgs:
30Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id:
3.5V @ 1mA
REACH Status:
REACH Unaffected
edacadModel:
VP2450N8-G Models
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/4902996
Drain to Source Voltage (Vdss):
500 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
1.6W (Ta)
standardLeadTime:
4 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
190 pF @ 25 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
TO-243AA (SOT-89)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
160mA (Tj)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
VP2450
ECCN:
EAR99
