Renesas Electronics America RJK6032DPH-E0#T2

RJK6032DPH-E0-T2 Renesas Electronics America RJK6032DPH-E0#T2
Renesas Electronics America

Product Information

Rds On (Max) @ Id, Vgs:
4.3Ohm @ 1.5A, 10V
Detailed Description:
N-Channel 600V 3A (Ta) 40.3W (Tc) Through Hole TO-251
Input Capacitance (Ciss) (Max) @ Vds:
285pF @ 25V
Mounting Type:
Through Hole
Gate Charge (Qg) (Max) @ Vgs:
9nC @ 10V
Drain to Source Voltage (Vdss):
600V
Vgs (Max):
±30V
Supplier Device Package:
TO-251
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Tape & Reel (TR)
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
Power Dissipation (Max):
40.3W (Tc)
Current - Continuous Drain (Id) @ 25°C:
3A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Renesas Electronics America
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This is manufactured by Renesas Electronics America. The manufacturer part number is RJK6032DPH-E0#T2. It has a maximum Rds On and voltage of 4.3ohm @ 1.5a, 10v. It features n-channel 600v 3a (ta) 40.3w (tc) through hole to-251. The product's input capacitance at maximum includes 285pf @ 25v. The product is available in through hole configuration. The maximum gate charge and given voltages include 9nc @ 10v. The product has a 600v drain to source voltage. The maximum Vgs rate is ±30v. to-251 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tape & reel (tr) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-251-3 short leads, ipak, to-251aa. The product carries maximum power dissipation 40.3w (tc). The continuous current drain at 25°C is 3a (ta). This product use mosfet (metal oxide) technology. The renesas electronics america's product offers user-desired applications.

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Mult Dev EOL 15/Dec/2018(PCN Obsolescence/ EOL)
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RJK6032DPH-E0#T2(Datasheets)

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