Renesas Electronics America RJK6006DPP-E0#T2

RJK6006DPP-E0-T2 Renesas Electronics America RJK6006DPP-E0#T2
Renesas Electronics America

Product Information

Rds On (Max) @ Id, Vgs:
1.6Ohm @ 2.5A, 10V
Detailed Description:
N-Channel 600V 5A (Ta) 29W (Tc) Through Hole TO-220FP
Input Capacitance (Ciss) (Max) @ Vds:
600pF @ 25V
Mounting Type:
Through Hole
Gate Charge (Qg) (Max) @ Vgs:
19nC @ 10V
Drain to Source Voltage (Vdss):
600V
Vgs (Max):
±30V
Supplier Device Package:
TO-220FP
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Tube
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Package / Case:
TO-220-3 Full Pack
Power Dissipation (Max):
29W (Tc)
Current - Continuous Drain (Id) @ 25°C:
5A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Renesas Electronics America
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This is manufactured by Renesas Electronics America. The manufacturer part number is RJK6006DPP-E0#T2. It has a maximum Rds On and voltage of 1.6ohm @ 2.5a, 10v. It features n-channel 600v 5a (ta) 29w (tc) through hole to-220fp. The product's input capacitance at maximum includes 600pf @ 25v. The product is available in through hole configuration. The maximum gate charge and given voltages include 19nc @ 10v. The product has a 600v drain to source voltage. The maximum Vgs rate is ±30v. to-220fp is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-220-3 full pack. The product carries maximum power dissipation 29w (tc). The continuous current drain at 25°C is 5a (ta). This product use mosfet (metal oxide) technology. The renesas electronics america's product offers user-desired applications.

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Mult Dev EOL 19/Dec/2019(PCN Obsolescence/ EOL)
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RJK6006DPP-E0#T2(Datasheets)
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Mult Device EOL 24/May/2017(PCN Part Status Change)

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