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This is manufactured by Renesas Electronics America. The manufacturer part number is RJK1003DPN-E0#T2. It has a maximum Rds On and voltage of 11mohm @ 25a, 10v. It features n-channel 100v 50a (ta) 125w (tc) through hole to-220ab. The product's input capacitance at maximum includes 4150pf @ 10v. The product is available in through hole configuration. The maximum gate charge and given voltages include 59nc @ 10v. The product has a 100v drain to source voltage. The maximum Vgs rate is ±20v. to-220ab is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-220-3. The product carries maximum power dissipation 125w (tc). The continuous current drain at 25°C is 50a (ta). This product use mosfet (metal oxide) technology. The renesas electronics america's product offers user-desired applications.
For more information please check the datasheets.
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