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This is manufactured by Renesas Electronics America. The manufacturer part number is NP80N055NDG-S18-AY. It has a maximum Rds On and voltage of 6.9mohm @ 40a, 10v. It features n-channel 55v 80a (tc) 1.8w (ta), 115w (tc) through hole to-262. The product's input capacitance at maximum includes 6900pf @ 25v. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product has a 55v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 135nc @ 10v. to-262 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The product has 175°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-262-3 long leads, i²pak, to-262aa. The product carries maximum power dissipation 1.8w (ta), 115w (tc). The continuous current drain at 25°C is 80a (tc). This product use mosfet (metal oxide) technology. The renesas electronics america's product offers user-desired applications.
For more information please check the datasheets.
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