Renesas Electronics America NP110N04PUK-E1-AY

Renesas Electronics America

Product Information

Rds On (Max) @ Id, Vgs:
1.4mOhm @ 55A, 10V
Detailed Description:
N-Channel 40V 110A (Tc) 1.8W (Ta), 348W (Tc) Surface Mount TO-263-3
Input Capacitance (Ciss) (Max) @ Vds:
15750pF @ 25V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
4V @ 250µA
Drain to Source Voltage (Vdss):
40V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
297nC @ 10V
Supplier Device Package:
TO-263-3
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Tube
Operating Temperature:
175°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max):
1.8W (Ta), 348W (Tc)
Current - Continuous Drain (Id) @ 25°C:
110A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Renesas Electronics America
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This is manufactured by Renesas Electronics America. The manufacturer part number is NP110N04PUK-E1-AY. It has a maximum Rds On and voltage of 1.4mohm @ 55a, 10v. It features n-channel 40v 110a (tc) 1.8w (ta), 348w (tc) surface mount to-263-3. The product's input capacitance at maximum includes 15750pf @ 25v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has a 40v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 297nc @ 10v. to-263-3 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The product has 175°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. The product carries maximum power dissipation 1.8w (ta), 348w (tc). The continuous current drain at 25°C is 110a (tc). This product use mosfet (metal oxide) technology. The renesas electronics america's product offers user-desired applications.

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NP110N04PUK ~(Datasheets)

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