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Renesas Electronics America N0603N-S23-AY

Renesas Electronics America

Product Information

Manufacturer Standard Lead Time:
16 Weeks
Rds On (Max) @ Id, Vgs:
4.6mOhm @ 50A, 10V
Detailed Description:
N-Channel 60V 100A (Ta) 1.5W (Ta), 156W (Tc) Through Hole TO-262
Input Capacitance (Ciss) (Max) @ Vds:
7730pF @ 25V
Mounting Type:
Through Hole
Gate Charge (Qg) (Max) @ Vgs:
133nC @ 10V
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Supplier Device Package:
TO-262
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Tube
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-262-3 Long Leads, I²Pak, TO-262AA
Power Dissipation (Max):
1.5W (Ta), 156W (Tc)
Current - Continuous Drain (Id) @ 25°C:
100A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Renesas Electronics America
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This is manufactured by Renesas Electronics America. The manufacturer part number is N0603N-S23-AY. It has typical 16 weeks of manufacturer standard lead time. It has a maximum Rds On and voltage of 4.6mohm @ 50a, 10v. It features n-channel 60v 100a (ta) 1.5w (ta), 156w (tc) through hole to-262. The product's input capacitance at maximum includes 7730pf @ 25v. The product is available in through hole configuration. The maximum gate charge and given voltages include 133nc @ 10v. The product has a 60v drain to source voltage. The maximum Vgs rate is ±20v. to-262 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-262-3 long leads, i²pak, to-262aa. The product carries maximum power dissipation 1.5w (ta), 156w (tc). The continuous current drain at 25°C is 100a (ta). This product use mosfet (metal oxide) technology. The renesas electronics america's product offers user-desired applications.

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N0603N(Datasheets)

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