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Renesas Electronics America N0413N-ZK-E1-AY

Renesas Electronics America

Product Information

Rds On (Max) @ Id, Vgs:
3.3mOhm @ 50A, 10V
Detailed Description:
N-Channel 40V 100A (Ta) 1.5W (Ta), 119W (Tc) Surface Mount TO-263 (D²Pak)
Input Capacitance (Ciss) (Max) @ Vds:
5550pF @ 25V
Mounting Type:
Surface Mount
Gate Charge (Qg) (Max) @ Vgs:
100nC @ 10V
Drain to Source Voltage (Vdss):
40V
Vgs (Max):
±20V
Supplier Device Package:
TO-263 (D²Pak)
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Tape & Reel (TR)
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max):
1.5W (Ta), 119W (Tc)
Current - Continuous Drain (Id) @ 25°C:
100A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Renesas Electronics America
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This is manufactured by Renesas Electronics America. The manufacturer part number is N0413N-ZK-E1-AY. It has a maximum Rds On and voltage of 3.3mohm @ 50a, 10v. It features n-channel 40v 100a (ta) 1.5w (ta), 119w (tc) surface mount to-263 (d²pak). The product's input capacitance at maximum includes 5550pf @ 25v. The product is available in surface mount configuration. The maximum gate charge and given voltages include 100nc @ 10v. The product has a 40v drain to source voltage. The maximum Vgs rate is ±20v. to-263 (d²pak) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tape & reel (tr) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. The product carries maximum power dissipation 1.5w (ta), 119w (tc). The continuous current drain at 25°C is 100a (ta). This product use mosfet (metal oxide) technology. The renesas electronics america's product offers user-desired applications.

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N0413N(Datasheets)

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