Renesas Electronics America HAF1002-90STL-E

HAF1002-90STL-E Renesas Electronics America
Renesas Electronics America

Product Information

Rds On (Max) @ Id, Vgs:
90mOhm @ 7.5A, 10V
Detailed Description:
P-Channel 60V 15A (Ta) 50W (Tc) Surface Mount 4-LDPAK
Mounting Type:
Surface Mount
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
+3V, -16V
Supplier Device Package:
4-LDPAK
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Packaging:
Tape & Reel (TR)
Operating Temperature:
150°C (TJ)
FET Type:
P-Channel
Package / Case:
SC-83
Power Dissipation (Max):
50W (Tc)
Current - Continuous Drain (Id) @ 25°C:
15A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Renesas Electronics America
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This is manufactured by Renesas Electronics America. The manufacturer part number is HAF1002-90STL-E. It has a maximum Rds On and voltage of 90mohm @ 7.5a, 10v. It features p-channel 60v 15a (ta) 50w (tc) surface mount 4-ldpak. The product is available in surface mount configuration. The product has a 60v drain to source voltage. The maximum Vgs rate is +3v, -16v. 4-ldpak is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tape & reel (tr) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type p-channel. Moreover, the product comes in sc-83. The product carries maximum power dissipation 50w (tc). The continuous current drain at 25°C is 15a (ta). This product use mosfet (metal oxide) technology. The renesas electronics america's product offers user-desired applications.

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HAF1002(L,S)(Datasheets)

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