Renesas Electronics America 2SK3483-AZ

2SK3483-AZ Renesas Electronics America
Renesas Electronics America

Product Information

Rds On (Max) @ Id, Vgs:
52mOhm @ 14A, 10V
Detailed Description:
N-Channel 100V 28A (Ta) 1W (Ta), 40W (Tc) Through Hole TO-251 (MP-3)
Input Capacitance (Ciss) (Max) @ Vds:
2300pF @ 10V
Mounting Type:
Through Hole
Gate Charge (Qg) (Max) @ Vgs:
49nC @ 10V
Drain to Source Voltage (Vdss):
100V
Vgs (Max):
±20V
Supplier Device Package:
TO-251 (MP-3)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Bulk
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
Power Dissipation (Max):
1W (Ta), 40W (Tc)
Current - Continuous Drain (Id) @ 25°C:
28A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Renesas Electronics America
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This is manufactured by Renesas Electronics America. The manufacturer part number is 2SK3483-AZ. It has a maximum Rds On and voltage of 52mohm @ 14a, 10v. It features n-channel 100v 28a (ta) 1w (ta), 40w (tc) through hole to-251 (mp-3). The product's input capacitance at maximum includes 2300pf @ 10v. The product is available in through hole configuration. The maximum gate charge and given voltages include 49nc @ 10v. The product has a 100v drain to source voltage. The maximum Vgs rate is ±20v. to-251 (mp-3) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, bulk is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-251-3 short leads, ipak, to-251aa. The product carries maximum power dissipation 1w (ta), 40w (tc). The continuous current drain at 25°C is 28a (ta). This product use mosfet (metal oxide) technology. The renesas electronics america's product offers user-desired applications.

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Mult Devices EOL 15/Jun/2018(PCN Obsolescence/ EOL)
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2SK3483(Datasheets)

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