Renesas Electronics America 2SK3431-Z-E1-AZ

2SK3431-Z-E1-AZ Renesas Electronics America
Renesas Electronics America

Product Information

Rds On (Max) @ Id, Vgs:
5.6mOhm @ 42A, 10V
Detailed Description:
N-Channel 40V 83A (Tc) 1.5W (Ta), 100W (Tc) Through Hole TO-220AB
Input Capacitance (Ciss) (Max) @ Vds:
6100pF @ 10V
Mounting Type:
Through Hole
Gate Charge (Qg) (Max) @ Vgs:
110nC @ 10V
Drain to Source Voltage (Vdss):
40V
Vgs (Max):
±20V
Supplier Device Package:
TO-220AB
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Packaging:
Tape & Reel (TR)
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-220-3
Power Dissipation (Max):
1.5W (Ta), 100W (Tc)
Current - Continuous Drain (Id) @ 25°C:
83A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Renesas Electronics America
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This is manufactured by Renesas Electronics America. The manufacturer part number is 2SK3431-Z-E1-AZ. It has a maximum Rds On and voltage of 5.6mohm @ 42a, 10v. It features n-channel 40v 83a (tc) 1.5w (ta), 100w (tc) through hole to-220ab. The product's input capacitance at maximum includes 6100pf @ 10v. The product is available in through hole configuration. The maximum gate charge and given voltages include 110nc @ 10v. The product has a 40v drain to source voltage. The maximum Vgs rate is ±20v. to-220ab is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tape & reel (tr) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-220-3. The product carries maximum power dissipation 1.5w (ta), 100w (tc). The continuous current drain at 25°C is 83a (tc). This product use mosfet (metal oxide) technology. The renesas electronics america's product offers user-desired applications.

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Mult Devices EOL 15/Jun/2018(PCN Obsolescence/ EOL)
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2SK3431(Datasheets)

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