Toshiba Semiconductor and Storage TK6A53D(STA4,Q,M)

Enrgtech Part No: ET13074763
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Manufacturer Part No:
TK6A53D(STA4,Q,M)
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Manufacturer: Toshiba Semiconductor and Storage

TK6A53D-STA4-Q-M- Toshiba Semiconductor and Storage TK6A53D(STA4,Q,M)

Product Information

FET Feature:

HTSUS:

8541.29.0095

RoHS Status:

ROHS3 Compliant

Operating Temperature:

150°C (TJ)

Package / Case:

TO-220-3 Full Pack

Rds On (Max) @ Id, Vgs:

1.3Ohm @ 3A, 10V

title:

TK6A53D(STA4,Q,M)

Vgs(th) (Max) @ Id:

4.4V @ 1mA

edacadModel:

TK6A53D(STA4,Q,M) Models

FET Type:

N-Channel

Drive Voltage (Max Rds On, Min Rds On):

10V

edacadModelUrl:

/en/models/2768895

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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK6A53D(STA4,Q,M). It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack. It has a maximum Rds On and voltage of 1.3ohm @ 3a, 10v. The typical Vgs (th) (max) of the product is 4.4v @ 1ma. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 525 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 35w (tc). It has a long 32 weeks standard lead time. The product's input capacitance at maximum includes 600 pf @ 25 v. The product is available in through hole configuration. The product π-mosvii, is a highly preferred choice for users. The maximum gate charge and given voltages include 12 nc @ 10 v. to-220sis is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 6a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tk6a53, a base product number of the product. The product is designated with the ear99 code number.

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